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Vol 187
Pages:
137-142
Download volume:
RUS
Article

Anodic bonding method for adhesion enhancement of conducting films to dielectric substrates

Authors:
A. G. Syrkov1
N. S. Pshchelko2
About authors
  • 1 — Ph.D., Dr.Sci. professor Saint Petersburg State Mining Institute (Technical University)
  • 2 — Ph.D. associate professor Saint Petersburg State Mining Institute (Technical University)
Date submitted:
2009-09-08
Date accepted:
2009-11-18
Date published:
2010-06-25

Abstract

The appearance of great pulling electric fields at anodic bonding process with a conductor surface to ionic dielectric turns out to be possible due to the interlayer polarization developing in dielectric under the action of electric voltage. This results in a negative charge accumulation in a layer of small thickness beside anode. Thus applied electric voltage is distributed not through the whole thickness of a dielectric, but in fact is applied to a narrow area of the three-dimensional charge beside anode. Arising strong electric fields force the connected materials to unite. In the present work it is shown that use of the discussed technology allows to increase considerably adhesion of conducting films to dielectric substrates both in the process of their deposition and after it.

Область исследования:
(Archived) Applied and fundamental research in physics and mathematics
Keywords:
anodic bonding adhesion electric field films
Go to volume 187

References

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  2. Golovjashkin A.N., Krevchik V.D. Research of acoustically stimulated indemnifications of a residual impurity for improvement of characteristics of semiconductor detectors // Sensors of systems of measurement, control and management. Penza, 1999. Issue 19. P.37-38.
  3. Derjagin B.V., Krotova N.A., Smilga V.P. Adgesion of solid bodies. Moscow, 1973. 280 p.
  4. Zhabrev V.A, Moshnikov V.A, Pshchelko N.S., Tomaev V.V. Anodic bonding hardening of metal-to-glass coverings // Temperature-steady functional coverings: Proc. of 18-th meeting on Temperature-steady functional coverings. Tula, 2001. Part 1. P.182-187.
  5. Zaverjuhin B.N., Krevchik V.D, Muminov R.A, Ismailov H.H., Shamagdiev А.G. About temperature intervals of application of Si (Li)-p-i-n detectors // The Atomic energy. 1984. Vol.57. P.207-208.
  6. Zaverjuhin B.N., Krevchik V.D, Muminov R.A, Ismailov H.H., Shamagdiev A.G. Features of ultrasonic influence on detectors with non-uniform distribution of electric field // Physics and technics of semiconductors. 1986. Vol.20. P.525-528.
  7. Ozols A.R., Pshchelko N.S., Tairov V.N. Physical bases, calculation and application of anodic bonding of solid bodies. Riga, 1989. P.1. 46 p., P.2 59 p., P.3 60 p. 8. Pshchelko N.S., Stoyanova T.V. The influence of a roughness of surfaces of anodic bonding contact on its power characteristics // Nonferrous metals. 2008. № 5. P.51-57.
  8. Pshchelko N.S. Surface polarisation of ionic dielectric on border of contact with a conductor // Nanostructured metals and materials (Nonferrous metals). 2005. № 9.P.44-50.
  9. Tairov V.N, Prihodchenko V.A, Pshchelko N.S. Model of electroadhesive connection of ionic dielectric to metal // Proc. of 10-th symposium on mechanoemission and mechanochemistry of solid bodies. Moscow, 1986. P.62.
  10. Belyaev A.E., Venger E.F., Ermolovich I.B.,Konakova R.V., Lytvyn P.M., Milenin V.V., Prokopenko I.V., Svechnikov G.S., Soloviev E.A., Fedorenko L.L. Effect of microwave and laser radiations on the parameters of semiconductor structures. Kiev, 2002. P.138-148.
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