Simultaneous doping of silicon carbide with aluminum and nitrogen
Authors:
About authors
- Ph.D. associate professor Saint Petersburg State Mining Institute (Technical University)
Abstract
Three atomic shell cluster of SiC is treated as a set of chemical bonds with tetrahedral coordination. Chemical bonds energies are determined in tight binding approximation taking into account second neighbors interaction and relaxation of atomic positions. Correlations in behavior of Al and N atoms in Si-C-Al-N system determine the quasibinary character (SiC)1-x(AlN)x alloys. Inhomogeneous regions in (SiC)1-x(AlN)x system were evaluated using the condition of mixing free energy minimum. We assumed that doping does not change the vibration spectra of the crystal.
Область исследования:
(Archived) Applied and fundamental research in physics and mathematics
Funding:
None
References
- Reshanov S.A., Parfenova I.I., Rastegaev V.P. Croup III-V impurities in b-Si-C: lattice distortions and Solubility // Dimond and Related Materials 2001. Vol.10. P.1278-1282.
Similar articles
Distribution of the wave of vertical polarization in the infinite plasma layer with the maximum of the electronic concentration
2010 A. V. Denisov