Electrical methods for nondestructive quality control of capacitors metal-oxide structures
About authors
- 1 — Saint Petersburg State Mining Institute (Technical University)
- 2 — Herzen Russian State pedagogical university
Abstract
The paper presents a number of experimental techniques for detecting in amorphous tantalum oxide films structural defects, which accelerate film destruction processes in a strong electric field and thus are potentially dangerous under prolonged thermoelectric stresses applied to capacitor structures. It is shown that the anomalous frequency dependence of dielectric losses and increase of the leakage current over time can identify potentially unreliable capacitors.
References
- Пщелко Н.С. Использование полевых транзисторов для контроля характеристик диэлектриков / Н.С.Пщелко, А.С.Мустафаев // Записки Горного института. 2010. № 187. С.125-131.
- Ханин С.Д. Модели прыжкового переноса и методы анализа электронных свойств неупорядоченных систем // Известия РГПУ. Естественные и точные науки. 2002. № 2(4). С.47-56.
- Ханин С.Д. Проблемы электрофизики металлооксидных конденсаторных диэлектриков. Обзоры по электронной технике. Серия 5. Радиодетали и радиокомпоненты. 1990. Вып. 1 (1524). 57 с.
- Khanin S.D. Structure inhomogeneities of the oxide dielectric and the properties of tantalum capacitors. Materials Science Forum «Passivation of metals and semiconductors». Germany, Clausthal. 1995. V.185-188. P.573-580.
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