Diagnostics of potentially dangerous defects in dielectric materials
About authors
- 1 — Saint Petersburg State Mining University
- 2 — Saint Petersburg State Mining University
Abstract
The paper presents a number of experimental techniques for detecting in amorphous tantalum oxide films structural defects, which accelerate film destruction processes in a strong electric field and thus are potentially dangerous under prolonged thermoelectric stresses applied to capacitor structures. It is shown that the anomalous frequency dependence of dielectric losses and increase of the leakage current over time can identify potentially unreliable capacitors.
References
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- Ханин С.Д. Модели прыжкового переноса и ме- тоды анализа электронных свойств неупорядоченных систем // Известия РГПУ им. А.И.Герцена. Естественные и точные науки. 2002. № 2(4). С.47-56.
- Ханин С.Д. Проблемы электрофизики металло- оксидных конденсаторных диэлектриков // Обзоры по электронной технике. Серия 5. Радиодетали и радиоком- поненты. 1990. Вып.1. 57 с.
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