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Vol 196
Pages:
311
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RUS

Diagnostics of potentially dangerous defects in dielectric materials

Authors:
E. K. Grigorev1
N. S. Pshchelko2
About authors
  • 1 — Saint Petersburg State Mining University
  • 2 — Saint Petersburg State Mining University
Date submitted:
2011-08-13
Date accepted:
2011-10-01
Date published:
2012-02-01

Abstract

The paper presents a number of experimental techniques for detecting in amorphous tantalum oxide films structural defects, which accelerate film destruction processes in a strong electric field and thus are potentially dangerous under prolonged thermoelectric stresses applied to capacitor structures.  It is shown that the anomalous frequency dependence of dielectric losses and increase of the leakage current over time can identify potentially unreliable capacitors.

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References

  1. Пщелко Н.С. Использование полевых транзи- сторов для контроля характеристик диэлектриков / Н.С.Пщелко, А.С.Мустафаев // Записки Горного инсти- тута. 2010. Т.187. С.125-131.
  2. Ханин С.Д. Модели прыжкового переноса и ме- тоды анализа электронных свойств неупорядоченных систем // Известия РГПУ им. А.И.Герцена. Естественные и точные науки. 2002. № 2(4). С.47-56.
  3. Ханин С.Д. Проблемы электрофизики металло- оксидных конденсаторных диэлектриков // Обзоры по электронной технике. Серия 5. Радиодетали и радиоком- поненты. 1990. Вып.1. 57 с.
  4. Khanin S.D. Structure inhomogeneities of the oxide dielectric and the properties of tantalum capacitors // Materials Science Forum «Passivation of metals and semiconductors». 1994. Germany. Clausthal. 1995. Vol.185-188. P.573-580.

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