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Vol 74 Iss. 2
Pages:
80-84
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RUS
Article

Some peculiarities of morphology of silicon crystals grown by Czochralskii method

Authors:
M. D. Lyubalin
A. I. Pogodin
Date submitted:
1976-08-26
Date accepted:
1976-10-09
Date published:
1977-02-01

Abstract

In the industrial production of semiconductor silicon, the external shape of single crystals has received much attention. It has been found that directly in the process of growing from the melt by some features of the shape of mocco crystals one can get an idea of their internal structure, including the dislocation structure .....

Область исследования:
(Archived) Without section
Funding:

None

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References

  1. Antonov P.I., Grigoriev N.S., Vakhmyanin L.P Photogonnography of profiled crystals of germanium. Proc. of the USSR Academy of Sciences. Physical Series, 1972, vol. 34, № 3.
  2. Beve V.E., Osovsky M.I., Falkovkch E.S. Influence of growth conditions on the external shape of single crystals. In: Growth of Crystals. V. 10. M., Nauka , 1974.
  3. Buzynin A.N., Bletskhan N.I., Sheftal N.N. Dislocation Formation in Silicon Crystals. In the book: Problems of Crystallology. PH of MSU, 1976.
  4. Lubalin M.D. Photogoniometry of germanium crystals grown by the Czochralskii method. Journal of Mining Institute, 1968, vol. 54, iss. 2.
  5. Lubalin M.D., Mokievsky V. A. Shape of germanium crystals obtained by the Czochralskii method. Crystallography , 1968, vol. 13, № 4.
  6. Lubalin M.D. Morphology of crystals drawn from melts. In the book: Growth of Crystals. V. 9. M., Nauka , 1972.
  7. Peculiarities of appearance of dyslocation-free silicon single crystals. In the book: Growth of Crystals. V. 9. M., Nauka , 1972. Authors: E.S.Falkevipart N.I.Bletskan, K.I.Neimark, M.I.Osovsky.
  8. Stroitelev S.A., Kamarali V.V., Muravitskii S.A. Growth form of silicon single crystals grown by the method of non-tigel zone melting. In the book: Processes of Growth and Synthesis of Semiconductor Crystals and Films. Part 2. Novosibirsk, Nauka , 1975.
  9. Shafranovsky I.I. External symmetry of swarming crystals and symmetry of the feeding medium. Proc. AMS, 1954, part 83, vol. 3.
  10. Shashkov Y.M., Shushchlebina I.Ya. Reasons for the appearance of impurity bands during the growth of silicon single crystals. In the book: Materials of the I Meeting on Semiconductor Single Crystals Production by Stepanov Method and Prospects of Their Application in Instrument Engineering. L., PH of the USSR Academy of Sciences, 1968.

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