Diagnostics of potentially dangerous defects in dielectric materials
About authors
- 1 — student Saint Petersburg State Mining University
- 2 — Ph.D. associate professor Saint Petersburg State Mining University
Abstract
The paper presents a number of experimental techniques for detecting in amorphous tantalum oxide films structural defects, which accelerate film destruction processes in a strong electric field and thus are potentially dangerous under prolonged thermoelectric stresses applied to capacitor structures. It is shown that the anomalous frequency dependence of dielectric losses and increase of the leakage current over time can identify potentially unreliable capacitors.
Область исследования:
(Archived) Nanotechnologies and information technologies
Funding:
None
References
- Pshchelko N.S., Mustafaev A.S. Use of MOSFET for the control of dielectric characteristics // Proceedings of the Mining Institute. 2010. Vol.187. P.125-131.
- Khanin S.D. Hopping model and methods of analysis of the electronic properties of disordered systems // Proceedings of the RSPU n.a. A.I.Herzen. Natural and exact sciences. 2002. N 2(4). P.47-56.
- Khanin S.D. Problems of electrophysics of metal oxide capacitor dielectrics // Reviews of consumer electronics. Series 5. Radio units and radio components. 1990. Issue 1. 57 p.
- Khanin S.D. Structure inhomogeneities of the oxide dielectric and the properties of tantalum capacitors // Materials Science Forum «Passivation of metals and semiconductors». 1994. Germany. Clausthal. 1995. Vol.185-188. P.573-580.
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