Knowledge of the orientation dependence of the effective impurity distribution coefficients KEf between solid and liquid phases during crystal growth from the melt is necessary for proper doping in order to obtain semiconductor crystals with given properties ...
The mineralogical museum of LMI received a spectacular sample of germanium, which was the upper part of a large crystal grown from the melt by the pulling method, the device for realization of which is shown in Fig....
In the industrial production of semiconductor silicon, the external shape of single crystals has received much attention. It has been found that directly in the process of growing from the melt by some features of the shape of mocco crystals one can get an idea of their internal structure, including the dislocation structure .....
The results of goniometric measurements of germanium crystals obtained by drawing their melt at different crystallographic orientation of the inoculum are given in the article by G. Novak. In addition, the article by G. Novak shows the dominant morphological role of faces {111} and directions<110>; and <112>;, noted the presence of a number of vicinals and the absence of light maxima from the forms {100} and {110}.
