The proposed semiconductor microsensor element for continuous and operative control of gaseous medium condition includes as a base an oxide film obtained by magnetron method with the UVN-71 unit. The developed technology provides growth of the film up to 0.8 gm with subsequent thermal treatment with simultaneous control of its resistance. Tests in the laboratory allowed to reveal the dependence of gas sensitivity of the element and its fast response, as well as the features of the sensor operation in static and dynamic modes. The pulse mode of the sensor operation is preferable from the point of view of its durability and measurement accuracy.
