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Applied and fundamental research in physics and mathematics

Use of mosfet for the control of dielectric characteristics

Authors:
N. S. Pshchelko1
A. S. Mustafaev2
  • 1 — Saint Petersburg State Mining Institute (Technical University)
  • 2 — Saint Petersburg State Mining Institute (Technical University)
Date submitted:
2016-12-15
Date published:
2010-03-01

Abstract

In this work a device for measurement on a constant voltage of the basic electric characteristics of high-resistance dielectric materials and products from – their electric capacitance and resistance – is developed. The principle of work of the device is based on use of transients in connected in sereies elements having electric capacity and resistance. In the electric circuit of the device the MOSFET with high entrance resistance is used. The device on the basis of the MOSFET for measurement of surface potential of dielectrics is considered also. Use of this device is especially effective at measurement of electret surface potential. Results of research of electrets on a basis of silicon dioxide are discussed.

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